Field-Effect Transistors with Submicrometer Gate Lengths Fabricated fromLaAlO3−SrTiO3-Based Heterostructures
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Title
Field-Effect Transistors with Submicrometer Gate Lengths Fabricated fromLaAlO3−SrTiO3-Based Heterostructures
Authors
Keywords
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Journal
Physical Review Applied
Volume 4, Issue 6, Pages -
Publisher
American Physical Society (APS)
Online
2015-12-15
DOI
10.1103/physrevapplied.4.064003
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