Field-Effect Transistors with Submicrometer Gate Lengths Fabricated fromLaAlO3−SrTiO3-Based Heterostructures
出版年份 2015 全文链接
标题
Field-Effect Transistors with Submicrometer Gate Lengths Fabricated fromLaAlO3−SrTiO3-Based Heterostructures
作者
关键词
-
出版物
Physical Review Applied
Volume 4, Issue 6, Pages -
出版商
American Physical Society (APS)
发表日期
2015-12-15
DOI
10.1103/physrevapplied.4.064003
参考文献
相关参考文献
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