Transistor operation and mobility enhancement in top-gated LaAlO3/SrTiO3 heterostructures
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Title
Transistor operation and mobility enhancement in top-gated LaAlO3/SrTiO3 heterostructures
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 10, Pages 103507
Publisher
AIP Publishing
Online
2013-09-07
DOI
10.1063/1.4820449
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Related references
Note: Only part of the references are listed.- Field-effect devices utilizing LaAlO3-SrTiO3 interfaces
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- Role of Percolation in the Conductance of Electrolyte-GatedSrTiO3
- (2012) Mingyang Li et al. PHYSICAL REVIEW LETTERS
- A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface
- (2012) Arjun Joshua et al. Nature Communications
- Critical thickness for ferromagnetism in LaAlO3/SrTiO3 heterostructures
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- Electrolyte Gate-Controlled Kondo Effect inSrTiO3
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- Phase Diagram of Electrostatically DopedSrTiO3
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- Influence of the growth conditions on the LaAIO3/SrTiO3interface electronic properties
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- Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions
- (2010) Guneeta Singh-Bhalla et al. Nature Physics
- Tuning Spin-Orbit Coupling and Superconductivity at theSrTiO3/LaAlO3Interface: A Magnetotransport Study
- (2010) M. Ben Shalom et al. PHYSICAL REVIEW LETTERS
- Tunable Rashba Spin-Orbit Interaction at Oxide Interfaces
- (2010) A. D. Caviglia et al. PHYSICAL REVIEW LETTERS
- Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
- (2010) Hiromichi Ohta et al. Nature Communications
- Thickness dependence of the mobility at the LaAlO3/SrTiO3 interface
- (2009) C. Bell et al. APPLIED PHYSICS LETTERS
- Dominant Mobility Modulation by the Electric Field Effect at theLaAlO3/SrTiO3Interface
- (2009) C. Bell et al. PHYSICAL REVIEW LETTERS
- Electric field control of the LaAlO3/SrTiO3 interface ground state
- (2008) A. D. Caviglia et al. NATURE
- Electric-field-induced superconductivity in an insulator
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