Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

(2012) R. Kudrawiec et al.   APPLIED PHYSICS LETTERS

Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures

(2012) R. Kudrawiec et al.   JOURNAL OF APPLIED PHYSICS

The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

(2011) M. Gladysiewicz et al.   APPLIED PHYSICS LETTERS

Contactless electroreflectance of AlGaN/GaN heterostructures deposited on c-, a-, m-, and (20.1)-plane GaN bulk substrates grown by ammonothermal method

(2011) R. Kudrawiec et al.   JOURNAL OF APPLIED PHYSICS

Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

(2011) R. Kudrawiec et al.   JOURNAL OF APPLIED PHYSICS

Contactless electroreflectance study of Fermi-level pinning at the surface of cubic GaN

(2010) R. Kudrawiec et al.   APPLIED PHYSICS LETTERS

Application of contactless electroreflectance to III-nitrides

(2010) Robert Kudrawiec   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy

(2010) Pierre Lorenz et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Built-in electric field and large Stokes shift in near-lattice-matched GaN∕AlInN quantum wells

(2008) G. Franssen et al.   APPLIED PHYSICS LETTERS

Electronic structure of GaN(0001)-2 × 2 thin films grown by PAMBE

(2008) R. Gutt et al.   Physica Status Solidi-Rapid Research Letters