Fermi level influence on the adsorption at semiconductor surfaces—ab initio simulations

Erratum: “Ab initio studies of electronic properties of bare GaN(0001) surface” [J. Appl. Phys. 106, 054901 (2009)]

(2012) Pawel Kempisty et al.   JOURNAL OF APPLIED PHYSICS

On the nature of Surface States Stark Effect at clean GaN(0001) surface

(2012) Paweł Kempisty et al.   JOURNAL OF APPLIED PHYSICS

Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface

(2012) Paweł Kempisty et al.   JOURNAL OF CRYSTAL GROWTH

Erratum to “Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface — Existence of the Surface States Stark Effect (SSSE)” [Surf. Sci. 605 (2011) 695-713]

(2011) Pawel Kempisty et al.   SURFACE SCIENCE

A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(000 \bar{1} ) clean surfaces: significance of the surface Stark effect

(2010) Jakub Sołtys et al.   NEW JOURNAL OF PHYSICS

Electrostatic condition for the termination of the opposite face of the slab in density functional theory simulations of semiconductor surfaces

(2009) Stanisław Krukowski et al.   JOURNAL OF APPLIED PHYSICS