标题
A generic tight-binding model for monolayer, bilayer and bulk MoS2
作者
关键词
-
出版物
AIP Advances
Volume 3, Issue 5, Pages 052111
出版商
AIP Publishing
发表日期
2013-05-09
DOI
10.1063/1.4804936
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
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