Control of hot-carrier relaxation for realizing ideal quantum-dot intermediate-band solar cells
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Control of hot-carrier relaxation for realizing ideal quantum-dot intermediate-band solar cells
Authors
Keywords
-
Journal
Scientific Reports
Volume 4, Issue 1, Pages -
Publisher
Springer Nature
Online
2014-02-18
DOI
10.1038/srep04125
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Efficient upconverted photocurrent through an Auger process in disklike InAs quantum structures for intermediate-band solar cells
- (2013) David M. Tex et al. PHYSICAL REVIEW B
- Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
- (2013) Xiaoguang Yang et al. SOLAR ENERGY MATERIALS AND SOLAR CELLS
- Understanding intermediate-band solar cells
- (2012) Antonio Luque et al. Nature Photonics
- Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation
- (2012) Takashi Kita et al. PHYSICAL REVIEW B
- Symmetry considerations in the empirical k.p Hamiltonian for the study of intermediate band solar cells
- (2012) A. Luque et al. SOLAR ENERGY MATERIALS AND SOLAR CELLS
- Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
- (2011) Yoshitaka Okada et al. JOURNAL OF APPLIED PHYSICS
- Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge
- (2011) Kimberly A. Sablon et al. NANO LETTERS
- Upconversion of infrared photons to visible luminescence using InAs-based quantum structures
- (2011) David M. Tex et al. PHYSICAL REVIEW B
- Peak External Photocurrent Quantum Efficiency Exceeding 100% via MEG in a Quantum Dot Solar Cell
- (2011) O. E. Semonin et al. SCIENCE
- Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage
- (2010) Denis Guimard et al. APPLIED PHYSICS LETTERS
- Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
- (2010) E. Antolín et al. JOURNAL OF APPLIED PHYSICS
- Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design
- (2008) Stanko Tomić et al. APPLIED PHYSICS LETTERS
- Effect of strain compensation on quantum dot enhanced GaAs solar cells
- (2008) S. M. Hubbard et al. APPLIED PHYSICS LETTERS
- Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
- (2008) Ryuji Oshima et al. APPLIED PHYSICS LETTERS
- Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells
- (2008) Voicu Popescu et al. PHYSICAL REVIEW B
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started