Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics

(2010) Katsuhisa Yoshida et al.   APPLIED PHYSICS LETTERS

Impurity doping in self-assembled InAs/GaAs quantum dots by selection of growth steps

(2010) Tomoya Inoue et al.   JOURNAL OF APPLIED PHYSICS

Photofilling of intermediate bands

(2009) Rune Strandberg et al.   JOURNAL OF APPLIED PHYSICS

Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell

(2009) Yoshitaka Okada et al.   JOURNAL OF APPLIED PHYSICS

AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs

(2009) S. A. Blokhin et al.   SEMICONDUCTORS

Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design

(2008) Stanko Tomić et al.   APPLIED PHYSICS LETTERS

Effect of strain compensation on quantum dot enhanced GaAs solar cells

(2008) S. M. Hubbard et al.   APPLIED PHYSICS LETTERS

Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

(2008) Ryuji Oshima et al.   APPLIED PHYSICS LETTERS

Real time analysis of self-assembled InAs/GaAs quantum dot growth by probing reflection high-energy electron diffraction chevron image

(2008) Takuya Kudo et al.   JOURNAL OF APPLIED PHYSICS

Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells

(2008) Voicu Popescu et al.   PHYSICAL REVIEW B