Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage

The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept

(2009) Antonio Luque et al.   ADVANCED MATERIALS

Interface properties of InAs quantum dots produced by antimony surfactant-mediated growth: Etching of segregated antimony and its impact on the photoluminescence and lasing characteristics

(2009) Denis Guimard et al.   APPLIED PHYSICS LETTERS

Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

(2009) Wolfgang Guter et al.   APPLIED PHYSICS LETTERS

Response to “Comment on ‘Thermodynamic limits of quantum photovoltaic cell efficiency’” [Appl. Phys. Lett.92, 066101 (2008)]

(2008) Guodan Wei et al.   APPLIED PHYSICS LETTERS

Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design

(2008) Stanko Tomić et al.   APPLIED PHYSICS LETTERS

Effect of strain compensation on quantum dot enhanced GaAs solar cells

(2008) S. M. Hubbard et al.   APPLIED PHYSICS LETTERS

Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

(2008) Ryuji Oshima et al.   APPLIED PHYSICS LETTERS

Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells

(2008) Voicu Popescu et al.   PHYSICAL REVIEW B