Strain induced exciton fine-structure splitting and shift in bent ZnO microwires
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Title
Strain induced exciton fine-structure splitting and shift in bent ZnO microwires
Authors
Keywords
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Journal
Scientific Reports
Volume 2, Issue 1, Pages -
Publisher
Springer Nature
Online
2012-06-13
DOI
10.1038/srep00452
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Related references
Note: Only part of the references are listed.- Strain distribution in bent ZnO microwires
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- Influence of surface structure on the phonon-assisted emission process in the ZnO nanowires grown on homoepitaxial films
- (2009) Woong-Ki Hong et al. APPLIED PHYSICS LETTERS
- Experimental observation of bulk band dispersions in the oxide semiconductor ZnO using soft x-ray angle-resolved photoemission spectroscopy
- (2009) M. Kobayashi et al. JOURNAL OF APPLIED PHYSICS
- Bending-induced conductance increase in individual semiconductor nanowires and nanobelts
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- Ab-initiotheory of semiconductor band structures: New developments and progress
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- Probing Exciton Diffusion in Semiconductors Using Semiconductor-Nanorod Quantum Structures
- (2008) Jinkyoung Yoo et al. Small
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