4.6 Article

Influence of surface structure on the phonon-assisted emission process in the ZnO nanowires grown on homoepitaxial films

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 4, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3072349

Keywords

crystal defects; excitons; II-VI semiconductors; nanowires; phonons; photoluminescence; semiconductor quantum wires; surface roughness; wide band gap semiconductors; zinc compounds

Funding

  1. Korea Research Foundation
  2. Korean Government [KRF-2008-314-C00134]

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We carried out temperature-dependent photoluminescence measurements to investigate the influence of surface roughness on the phonon-assisted emission of the surface-tailored ZnO nanowires (NWs). For the rough ZnO NWs, the observation of strong defect emission with vibration peaks by the exciton-phonon coupling reflects the presence of a high density of surface defects, resulting in a rapid shift to lower energy region of free exciton emission and a strong contribution of the first order phonon-assisted free exciton in ultraviolet emission. This investigation indicates that the surface defects associated with roughness have a significant influence on the phonon-assisted exciton emission.

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