Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

A Review on Conduction Mechanisms in Dielectric Films

(2014) Fu-Chien Chiu   Advances in Materials Science and Engineering

Conduction mechanism of resistive switching films in MgO memory devices

(2012) Fu-Chien Chiu et al.   JOURNAL OF APPLIED PHYSICS

Dependence of ferromagnetic properties on growth oxygen partial pressure in boron-doped ZnO thin films

(2012) Hailing Yang et al.   JOURNAL OF MATERIALS SCIENCE

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

(2012) Fu-Chien Chiu et al.   Nanoscale Research Letters

Structural, Transport and Optical Properties of Boron-doped Zinc Oxide Nanocrystalline

(2011) Vinod Kumar et al.   JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

Bistable resistance memory switching effect in amorphous InGaZnO thin films

(2010) C. H. Kim et al.   APPLIED PHYSICS LETTERS

Boron doped ZnO thin films fabricated by RF-magnetron sputtering

(2010) Li Gao et al.   APPLIED SURFACE SCIENCE

Boron doped nanostructure ZnO films onto ITO substrate

(2010) Mujdat Caglar et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today