Room Temperature CVD of TiO2 Thin Films and Their Electronic Properties

Amorphous TiO2 thin films and TiO2-SiO2 thin films were deposited for use in the gate oxide of Metal Oxide Semiconductor-Field Effect Transistor (MOS-FET). They were deposited by a novel CVD method using hydrolysis of Titanium IV isopropoxide and Tetra ethyl ortho silicate at room temperature and atmospheric pressure. Root mean square (RMS) of as-deposited TiO2 films was 0.28 nm. TiO2 films annealed at 400 degrees C in air showed anatase phase, but TiO2-SiO2 films didn't crystallize below 700 degrees C. Dielectric constants of TiO2 films and TiO2-SiO2 films were about 40 and 20, respectively. Minima of equivalent oxide thickness of as-deposited TiO2 films and TiO2-SiO2 films were about 3.9 nm and 4.2 nm, respectively.