The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

Published 2014 View Full Article

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Title
The forming process in resistive-memory elements based on metal-insulator-semiconductor structures
Authors
Keywords
GaAs, Technical Physic Letter, Space Charge Region, Resistive Switching, Yttrium Oxide
Journal
TECHNICAL PHYSICS LETTERS
Volume 40, Issue 10, Pages 837-840
Publisher
Pleiades Publishing Ltd
Online
2014-11-14
DOI
10.1134/s1063785014100137
References
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