The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

标题
The forming process in resistive-memory elements based on metal-insulator-semiconductor structures
作者
关键词
GaAs, Technical Physic Letter, Space Charge Region, Resistive Switching, Yttrium Oxide
出版物
TECHNICAL PHYSICS LETTERS
Volume 40, Issue 10, Pages 837-840
出版商
Pleiades Publishing Ltd
发表日期
2014-11-14
DOI
10.1134/s1063785014100137

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