Influence of substrate temperature on the crystalline quality of AlN layers deposited by RF reactive magnetron sputtering

Determination of the Temperature Dependent Thermal Expansion Coefficients of Bulk AlN by HRXRD

(2016) H. Kröncke et al.   ACTA PHYSICA POLONICA A

High-Quality AlN Layer Homoepitaxially Grown on Nitrideda-Plane Sapphire Using a Ga–Al Flux

(2013) Masayoshi Adachi et al.   Applied Physics Express

Growth of AlN by pulsed and conventional MOVPE

(2013) Hanno Kröncke et al.   JOURNAL OF CRYSTAL GROWTH

Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE

(2013) D.V. Nechaev et al.   JOURNAL OF CRYSTAL GROWTH

Analysis of the Dislocation and Polarity in an AlN Layer Grown Using Ga–Al Flux

(2012) Masayoshi Adachi et al.   Applied Physics Express

Highly c-axis oriented AlN layers grown on c-plane sapphire substrates by radio-frequency sputter epitaxy at 1080°C

(2012) Nobuki Mutsukura et al.   THIN SOLID FILMS

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

(2011) Rie Togashi et al.   JOURNAL OF CRYSTAL GROWTH

AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

(2011) Takuya Nomura et al.   JOURNAL OF CRYSTAL GROWTH

The origin of stresses in magnetron-sputtered thin films with zone T structures

(2010) R. Daniel et al.   ACTA MATERIALIA

Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H–SiC substrate by MOVPE

(2010) Shuang Qu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Nitridation behavior of sapphire using a carbon-saturated N2–CO gas mixture

(2010) Hiroyuki Fukuyama et al.   JOURNAL OF APPLIED PHYSICS

Synthesis of c-axis oriented AlN thin films on different substrates: A review

(2010) G.F. Iriarte et al.   MATERIALS RESEARCH BULLETIN

The influence of sputter deposition parameters on piezoelectric and mechanical properties of AlN thin films

(2010) A. Ababneh et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition

(2010) Hongju Chen et al.   VACUUM

Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy

(2009) B. Liu et al.   SOLID STATE COMMUNICATIONS