Tunnel field-effect transistors with graphene channels

Published 2013 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Tunnel field-effect transistors with graphene channels
Authors
Keywords
Gate Voltage, Tunnel Current, Dirac Point, Drain Voltage, Hexagonal Boron Nitride
Journal
SEMICONDUCTORS
Volume 47, Issue 2, Pages 279-284
Publisher
Pleiades Publishing Ltd
Online
2013-02-19
DOI
10.1134/s1063782613020218
References
View 4 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.