Tunnel field-effect transistors with graphene channels

标题
Tunnel field-effect transistors with graphene channels
作者
关键词
Gate Voltage, Tunnel Current, Dirac Point, Drain Voltage, Hexagonal Boron Nitride
出版物
SEMICONDUCTORS
Volume 47, Issue 2, Pages 279-284
出版商
Pleiades Publishing Ltd
发表日期
2013-02-19
DOI
10.1134/s1063782613020218

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