Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods

Title
Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods
Authors
Keywords
Silicon Nitride, Double Barrier, Silicon Excess, Silicon Nitride Layer, Phase Change Random Access Memory
Journal
SEMICONDUCTORS
Volume 47, Issue 5, Pages 641-646
Publisher
Pleiades Publishing Ltd
Online
2013-05-08
DOI
10.1134/s1063782613050072

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