Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods

标题
Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods
作者
关键词
Silicon Nitride, Double Barrier, Silicon Excess, Silicon Nitride Layer, Phase Change Random Access Memory
出版物
SEMICONDUCTORS
Volume 47, Issue 5, Pages 641-646
出版商
Pleiades Publishing Ltd
发表日期
2013-05-08
DOI
10.1134/s1063782613050072

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