Effect of the temperature during deposition of AlO x films by spray pyrolysis on their passivating properties in a silicon solar cell

Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

(2010) N. M. Terlinden et al.   APPLIED PHYSICS LETTERS

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

(2009) Pierre Saint-Cast et al.   APPLIED PHYSICS LETTERS

Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide

(2009) Tsu-Tsung Li et al.   Physica Status Solidi-Rapid Research Letters

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

Fluorine doped indium oxide films for silicon solar cells

(2009) G.G. Untila et al.   THIN SOLID FILMS

High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

(2008) Jan Benick et al.   APPLIED PHYSICS LETTERS

Silicon surface passivation by atomic layer deposited Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation

(2008) J. J. H. Gielis et al.   JOURNAL OF APPLIED PHYSICS

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

(2008) J. Schmidt et al.   PROGRESS IN PHOTOVOLTAICS

Effect of conditions of deposition and annealing of indium oxide films doped with fluorine (IFO) on the photovoltaic properties of the IFO/p-Si heterojunction

(2008) G. G. Untila et al.   SEMICONDUCTORS