Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

MBE-grown AlN-on-Si with improved crystalline quality by using silicon-on-insulator substrates

(2014) Lang Niu et al.   Applied Physics Express

Effect of multiple AlN layers on quality of GaN films grown on Si substrates

(2014) Binh Tinh Tran et al.   Electronic Materials Letters

Competitive growth mechanisms of AlN on Si (111) by MOVPE

(2014) Yuxia Feng et al.   Scientific Reports

AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

(2013) E. Cicek et al.   APPLIED PHYSICS LETTERS

Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)

(2013) Yinjun Zhang et al.   APPLIED PHYSICS LETTERS

Controlled coalescence of MOVPE grown AlN during lateral overgrowth

(2013) V. Kueller et al.   JOURNAL OF CRYSTAL GROWTH

Realization of 256–278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates

(2011) Takuya Mino et al.   Applied Physics Express

Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

(2010) H.P.D. Schenk et al.   JOURNAL OF CRYSTAL GROWTH