Realization of 256–278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates

284–300 nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates

(2011) Sachie Fujikawa et al.   Applied Physics Express

Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

(2010) Akira Fujioka et al.   Applied Physics Express

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

(2010) Cyril Pernot et al.   Applied Physics Express

Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

(2010) James R. Grandusky et al.   Applied Physics Express

Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

(2010) Hideki Hirayama et al.   Applied Physics Express

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1−xN on Si (111)

(2009) Phannee Saengkaew et al.   JOURNAL OF CRYSTAL GROWTH