Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells

ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

(2014) Sergey Karpov   OPTICAL AND QUANTUM ELECTRONICS

Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III–Nitride Light-Emitting Diodes

(2013) Yoshinobu Kawaguchi et al.   Applied Physics Express

Sensitivity analysis of electron leakage in III-nitride light-emitting diodes

(2013) Joachim Piprek et al.   APPLIED PHYSICS LETTERS

Modeling of III-Nitride Multiple-Quantum-Well Light-Emitting Structures

(2013) M. V. Kisin et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells

(2013) Matteo Meneghini et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Modeling of color-coded III-nitride LED structures with deep quantum wells

(2013) Mikhail V. Kisin et al.   OPTICAL AND QUANTUM ELECTRONICS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

(2012) Yoshinobu Kawaguchi et al.   APPLIED PHYSICS LETTERS

Non-equilibrium quantum well populations and active region inhomogeneity in polar and nonpolar III-nitride light emitters

(2012) Mikhail V. Kisin et al.   JOURNAL OF APPLIED PHYSICS

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Impact of Carrier Transport on Aquamarine–Green Laser Performance

(2010) Dmitry S. Sizov et al.   Applied Physics Express

Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells

(2010) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency

(2010) X. Ni et al.   SUPERLATTICES AND MICROSTRUCTURES

Optical characteristics of III-nitride quantum wells with different crystallographic orientations

(2009) Mikhail V. Kisin et al.   JOURNAL OF APPLIED PHYSICS

Electro-optical characteristics of reflective liquid crystal mode using π-cell for low power operation

(2008) Jin Seog Gwag et al.   APPLIED PHYSICS LETTERS

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

(2008) Xianfeng Ni et al.   APPLIED PHYSICS LETTERS

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS