Approach for Al2O3rear surface passivation of industrial p-type Si PERC above 19%

Impact of Forming Gas Annealing and Firing on the Al2O3/p-Si Interface State Spectrum

(2011) E. Simoen et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Electronic and chemical properties of the c-Si/Al2O3 interface

(2011) Florian Werner et al.   JOURNAL OF APPLIED PHYSICS

Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

(2010) N. M. Terlinden et al.   APPLIED PHYSICS LETTERS

Comprehensive analytical model for locally contacted rear surface passivated solar cells

(2010) Andreas Wolf et al.   JOURNAL OF APPLIED PHYSICS

Silicon surface passivation by atomic layer deposited Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation

(2008) J. J. H. Gielis et al.   JOURNAL OF APPLIED PHYSICS