Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic Substitution

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

(2017) S A Kukushkin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide

(2017) S. A. Grudinkin et al.   PHYSICS OF THE SOLID STATE

Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide

(2017) Yu. E. Kitaev et al.   PHYSICS OF THE SOLID STATE

X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method

(2017) S. A. Kukushkin et al.   PHYSICS OF THE SOLID STATE

Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice

(2017) A. S. Grashchenko et al.   SEMICONDUCTORS

Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitution on the high-resistance (111) oriented silicon

(2017) S.A. Kukushkin et al.   SUPERLATTICES AND MICROSTRUCTURES

The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms

(2017) S. A. Kukushkin et al.   TECHNICAL PHYSICS LETTERS

Determining polytype composition of silicon carbide films by UV ellipsometry

(2016) S. A. Kukushkin et al.   TECHNICAL PHYSICS LETTERS

Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon

(2015) S. A. Grudinkin et al.   PHYSICS OF THE SOLID STATE

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

(2014) S A Kukushkin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

(2014) S. A. Kukushkin et al.   PHYSICS OF THE SOLID STATE

A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles

(2013) S. A. Kukushkin et al.   JOURNAL OF APPLIED PHYSICS

Restoring the Density-Gradient Expansion for Exchange in Solids and Surfaces

(2008) John P. Perdew et al.   PHYSICAL REVIEW LETTERS