Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

First-order phase transition through an intermediate state

(2014) S. A. Kukushkin et al.   PHYSICS OF THE SOLID STATE

Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films

(2013) Francesca Iacopi et al.   APPLIED PHYSICS LETTERS

A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles

(2013) S. A. Kukushkin et al.   JOURNAL OF APPLIED PHYSICS

A new mechanism of elastic energy relaxation in heteroepitaxy of monocrystalline films: Interaction of point defects and dilatation dipoles

(2013) S. A. Kukushkin et al.   Mechanics of Solids

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

(2013) S. A. Kukushkin et al.   SEMICONDUCTORS

Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

(2013) S. A. Kukushkin et al.   TECHNICAL PHYSICS LETTERS

Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble

(2012) S. A. Kukushkin et al.   DOKLADY PHYSICS

Features and mechanisms of growth of cubic silicon carbide films on silicon

(2012) L. K. Orlov et al.   PHYSICS OF THE SOLID STATE

Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide

(2012) S. A. Kukushkin et al.   TECHNICAL PHYSICS LETTERS

Structural and optical properties of high quality ZnO thin film on Si with SiC buffer layer

(2012) A. Osipov et al.   THIN SOLID FILMS

Structural characterization of GaN epilayers on silicon: Effect of buffer layers

(2011) L. M. Sorokin et al.   TECHNICAL PHYSICS LETTERS

Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)

(2010) T. S. Perova et al.   Nanoscale Research Letters

Raman scattering in mosaic silicon carbide films

(2010) I. G. Aksyanov et al.   PHYSICS OF THE SOLID STATE

Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

(2010) V. N. Bessolov et al.   TECHNICAL PHYSICS LETTERS

Growth of 3C-SiC on Si(100) by Low Pressure Chemical Vapor Deposition Using a Modified Four-Step Process

(2009) W.-Y. Chen et al.   CRYSTAL GROWTH & DESIGN

Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111)

(2009) Y. H. Zhu et al.   JOURNAL OF APPLIED PHYSICS

Luminescence spectra of hexagonal forms of silicon carbide in mosaic films grown by solid-state epitaxy

(2009) M. E. Kompan et al.   PHYSICS OF THE SOLID STATE

New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment

(2008) S. A. Kukushkin et al.   PHYSICS OF THE SOLID STATE

Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy

(2008) L. M. Sorokin et al.   TECHNICAL PHYSICS LETTERS

Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer

(2008) I. G. Aksyanov et al.   TECHNICAL PHYSICS LETTERS