Article
Physics, Multidisciplinary
Jingwen Yang, Zhicheng Shi, Zhen-Biao Yang, Li-tuo Shen, Shi-Biao Zheng
Summary: Quantum phase transition and entanglement in the Rabi model with squeezed light were investigated. A special unitary-transformation method was found to remove nonintegrable squeezing and counter-rotating wave interactions when the qubit frequency is close to the field frequency. The analytical ground state agrees well with the numerical solution. It was demonstrated that the ground state exhibits a first-order quantum phase transition induced linearly by the squeezed light. This quantum phase transition does not require multiple qubits or an infinite ratio of qubit frequency to field frequency, addressing a critical problem in the theory and experiment of the Rabi model. As the qubit-field coupling strength increases, the ground-state entanglement reaches its maximum value at the critical point.
Article
Materials Science, Multidisciplinary
Galbadrakh Dagvadorj, Michal Kulczykowski, Marzena H. Szymanska, Michal Matuszewski
Summary: The study reveals the existence of two critical points in the phase diagram of a two-dimensional driven-dissipative system of polaritons, corresponding to quasicondensation and a first-order phase transition from a nonuniform state to a uniform state. The first-order nature of the transition is evidenced by discontinuity in density and correlation length, as well as phase coexistence and metastability. Additionally, a Berezinskii-Kosterlitz-Thouless-like transition signature is observed in the nonuniform phase.
Article
Physics, Multidisciplinary
Antonio Piscitelli, Antonio Coniglio, Annalisa Fierro, Massimo Pica Ciamarra
Summary: The dimensional dependence of percolative exponents of the jamming transition was determined via numerical simulations in four and five spatial dimensions, indicating jamming as a mixed first-order percolation transition with specific critical exponents. The upper critical dimension and connectedness length exponent were also discussed in this study.
PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS
(2021)
Article
Materials Science, Multidisciplinary
Runhan Li, Ning Mao, Linke Cai, Yingxi Bai, Baibiao Huang, Ying Dai, Chengwang Niu
Summary: In this study, the authors propose that ferroelectric switching can be used to control the topological phase transition between Z2 topological insulators and higher-order topological insulators. They identify a potential material candidate for this transition and highlight the significance of this research for the fields of topological physics and materials.
Article
Physics, Fluids & Plasmas
Piotr Bialas, Paulina Czarnota, Piotr Korcyl, Tomasz Stebel
Summary: In this study, the hierarchical autoregressive neural network sampling algorithm is applied to the two-dimensional Q-state Potts model near the phase transition at Q = 12. The performance of this approach is quantified and compared with the Wolff cluster algorithm, showing a significant improvement in statistical uncertainty with similar computational effort. The technique of pretraining is introduced to efficiently train large neural networks by using smaller system sizes as starting configurations. The results demonstrate the effectiveness of the hierarchical approach for systems with bimodal distributions, providing estimates of free energy and entropy with high statistical uncertainties.
Article
Physics, Applied
V. Hardy, R. Hamane, X. Larose, M. Risser, F. Guillou
Summary: This study reports on a method of analyzing semi-adiabatic relaxation data to explain exotic phenomena observed in first-order transitions. The focus is on characterizing latent heat in detail while using the same experimental configuration as accurate heat capacity measurements. The study is consistent with differential scanning calorimetry, magnetization measurements, and conventional heat capacity analysis.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Chen Peng, Long Zhang, Zhong-Yi Lu
Summary: The study shows that plaquette modulation can drive a direct topological quantum phase transition from a higher-order symmetry-protected topological phase to a trivial disordered phase, bridging the transition between antiferromagnetic order and valence bond solid order at the deconfined quantum critical point. This reveals a ubiquitous duality between topological transitions of symmetry-protected topological phases and deconfined quantum critical points.
Article
Materials Science, Multidisciplinary
Yuzhi Liu, Zi Yang Meng, Shuai Yin
Summary: In this study, it was found that massless Dirac fermions can enhance bosonic phase transitions, increasing the parameter range for first-order transitions. The microscopic mechanism behind this phenomenon involves the interplay between critical fluctuations and finite-size effects.
Article
Multidisciplinary Sciences
Joshua M. Brown, Terry Bossomaier, Lionel Barnett
Summary: Phase transitions are common in nature and society, and their prediction is of great importance. By studying information flow, we found that global transfer entropy peaks on the disordered side of various types of transitions, providing insights into their unified behavior.
SCIENTIFIC REPORTS
(2022)
Article
Chemistry, Multidisciplinary
Hyungjoon Shim, Geunseop Lee
Summary: Nanoscale phase separation is common in various materials, and in this study, an array of indium wires on Si(111) undergoes a first-order charge-density-wave (CDW) transition with minimal or no phase separation when prepared without indium adatom impurities. However, the presence of indium adatom impurities causes phase separation and blurs the transition. These experimental observations provide insights into nanoscale surface phase transitions.
Article
Physics, Nuclear
Shuying Zhou, Song Shu, Hong Mao
Summary: This study investigates the dynamics of a strong first-order quark-hadron transition driven by cubic interactions in the Friedberg-Lee model, focusing on homogeneous bubble nucleation. Results show the effects of temperature and chemical potential on surface tension, critical bubble radius, and shift in coarse-grained free energy, along with addressing the limit on the reliability of the thin-wall approximation. A comparison is made with results from a weak first-order quark-hadron phase transition, highlighting the relevance of spinodal decomposition.
Article
Chemistry, Physical
Shi-Yu Liu, Yao Yu, Lin Liu
Summary: This study reports a two-step melting process in a three-dimensional system. The results indicate that in (S)-(+)-ibuprofen, the crystal undergoes an indirect transformation to an intermediate liquid phase with an extremely long lifetime, and then transitions to the ordinary liquid phase at a spinodal point. These observations suggest that the complexity of the liquid can influence the melting transition pathway.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Chemistry, Physical
Shengtang Liu, Chun Wang, Jianghua Wu, Bailin Tian, Yamei Sun, Yang Lv, Zhangyan Mu, Yuxia Sun, Xiaoshan Li, Fangyuan Wang, Yiqi Wang, Lingyu Tang, Peng Wang, Yafei Li, Mengning Ding
Summary: The study introduces a high-performance 2D monolayer Bi2WO6 catalyst for the electrocatalytic conversion of CO2 to formic acid. Through detailed experimental and theoretical investigations, the study reveals the catalytic mechanism behind its high efficiency and superior performance.
Article
Chemistry, Multidisciplinary
Yang Liu, Song Liu, Baichang Li, Won Jong Yoo, James Hone
Summary: Robust ferroelectricity can be achieved in nonferroelectric semiconducting 2H-WSe2 by creating R-stacked bilayers with broken inversion symmetry. The phase transition order of this artificial ferroelectric heterostructure is first-order, with a measured Curie temperature of 353K. The stability of this artificial ferroelectric material is demonstrated through consecutive polarization measurements.
Article
Physics, Multidisciplinary
Yuan-Heng Tseng, Yun-Hsuan Tseng, Fu-Jiun Jiang
Summary: This study employs a universal neural network, trained only once on a one-dimensional lattice of 200 sites, to investigate the phase transition of the two-dimensional 5-state ferromagnetic Potts model on the square lattice. The neural network is obtained using two artificially made configurations as the training set. The results obtained from systems consisting of over 4,000,000 spins demonstrate the convincing evidence that the investigated phase transition is weakly first order.
EUROPEAN PHYSICAL JOURNAL PLUS
(2022)
Article
Chemistry, Physical
Sergey A. Kukushkin, Andrey V. Osipov
Summary: Thin films of single-crystal silicon carbide grown on silicon substrate via a chemical reaction with carbon monoxide gas were studied using spectral ellipsometry in the photon energy range of 0.5-9.3 eV. An intermediate layer with semimetal properties was found to form at the interface between 3C-SiC(111) and Si(111), and quantum chemistry methods were used to calculate the properties of this interface. Silicon atoms from the substrate were shown to be attracted to the interface on the side of the silicon carbide film, resulting in semimetal properties corresponding to the ellipsometry data.
Article
Chemistry, Applied
Alexander S. Grashchenko, Sergey A. Kukushkin, Andrey V. Osipov, Alexey V. Redkov
Summary: A modified technique for growing silicon carbide from silicon by self-consistent substitution of atoms is proposed, which enables a significant increase in the achievable thickness of the silicon carbide layer. The technique includes a surface treatment step to promote the separation of silicon carbide from the silicon substrate.
Review
Chemistry, Multidisciplinary
S. A. Kukushkin, A. V. Osipov
Summary: This article reviews the advances in SiC epitaxial film growth on silicon, describing the main methods used and analyzing their advantages and disadvantages. It also presents a new method called the method of coordinated substitution of atoms for synthesizing epitaxial SiC films on silicon, and discusses its main idea and theory. The review includes experimental data on the growth of a wide range of films and heterostructures of wide-gap semiconductors. The SiC layer grown on silicon using the method of substitution of atoms is shown to be a promising material for spintronics and quantum computer elements.
RUSSIAN JOURNAL OF GENERAL CHEMISTRY
(2022)
Article
Mechanics
A. Redkov, S. A. Kukushkin
Summary: In this study, the growth process of faceted pores in a crystal under applied mechanical load is investigated using the Barton-Cabrera-Frank model. The presence of adatoms on the surface of pore faces is taken into account. The growth is attributed to the flow of excess vacancies from the bulk of the crystal caused by tensile stresses. Recombination of advacancies and adatoms on the surface of pores is considered, and it is found that an additional flow of adatoms from steps and fissures to the terrace can contribute to the growth of the pores under load.
MECHANICS OF SOLIDS
(2022)
Article
Chemistry, Physical
Sergey A. Kukushkin, Andrey V. Osipov
Summary: In this study, silicon carbide layers with silicon vacancies were grown using the Method of Coordinated Substitution of Atoms (MCSA). The dielectric function of silicon carbide containing silicon vacancies, grown on both n- and p-type silicon substrates, was measured for the first time. The influence of the magnetic moment of vacancies on the dielectric function was shown to be decisive. It was discovered that silicon vacancies make silicon carbide much less transparent, and the concentration and charge of vacancies could be qualitatively estimated based on the additional peaks in the imaginary part of the dielectric function.
Article
Chemistry, Physical
Alexander A. Koryakin, Sergey A. Kukushkin, Andrey Osipov, Shukrillo Sh Sharofidinov, Mikhail P. Shcheglov
Summary: This study investigates the growth mechanism of aluminum nitride (AlN) epitaxial films on silicon carbide (SiC) epitaxial layers using hydride vapor phase epitaxy (HVPE). The peculiarity of this study lies in the use of SiC layers synthesized by the method of coordinated substitution of atoms. The structure and morphology of the AlN films are studied using various techniques such as X-ray diffraction, scanning electron microscopy, reflection high-energy electron diffraction, and Raman spectroscopy. The study also proposes a theoretical model explaining the presence of two orientations of AlN films on SiC/Si(110) substrates and presents a method for controlling their orientation.
Article
Materials Science, Multidisciplinary
Andrey V. Osipov, Shukrillo Sh. Sharofidinov, Elena V. Osipova, Andrey V. Kandakov, Andrey Y. Ivanov, Sergey A. Kukushkin
Summary: A new method of growing layers of three main crystal modifications of Ga2O3 has been developed in this study. By combining the hydride vapor-phase epitaxy method with a silicon crystal substrate with a buffer layer, layers of alpha-phase, epsilon-phase, and beta-phase Ga2O3 were successfully grown. It was found that the metastable alpha- and epsilon-phases transform into the stable beta-phase at temperatures above 900 degrees C.
Article
Materials Science, Multidisciplinary
Sergey A. Kukushkin, Lev K. Markov, Alexey S. Pavlyuchenko, Irina P. Smirnova, Andrey V. Osipov, Alexander S. Grashchenko, Andrey E. Nikolaev, Alexey V. Sakharov, Andrey F. Tsatsulnikov, Genadii V. Sviatets
Summary: This paper introduces a new type of substrate for LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on Si surface using the conventional method, a new method involving MCSA for forming SiC layers is proposed. This approach enables the growth of high-quality epitaxial GaN layers and easy transfer to any surface. The paper details the technology of manufacturing LEDs on SiC/Si substrates obtained by MCSA and discusses the benefits of using these substrates in LED production. The optimal thickness and growth interface of SiC layers are also explored to improve LED performance and simplify substrate removal.
Article
Materials Science, Multidisciplinary
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, V. V. Romanov, L. E. Klyachkin, A. M. Malyarenko, N. I. Rul'
Summary: The article presents the experimental measurement and analysis results of the field dependences of the static magnetic susceptibility of thin epitaxial silicon carbide films grown on the (110) surface of single-crystal silicon. Two quantum effects were found to occur simultaneously in weak magnetic fields.
MATERIALS PHYSICS AND MECHANICS
(2022)
Article
Materials Science, Multidisciplinary
O. A. Shustova, O. N. Sergeeva, A. Solnyshkin, I. T. Zezianov, E. Yu Kaptelov, I. P. Pronin, Sh Sh Sharofudinov, S. A. Kukushkin
Summary: This study compares the dielectric and pyroelectric properties of single-layer and multilayer aluminum nitride (AlN) samples. By using a silicon wafer covered with a silicon carbide nanolayer as the substrate for growing AlN single-crystalline layers, it is possible to change the orientation of the polar hexagonal axis in AlN crystals.
Article
Physics, Applied
A. S. Grashchenko, S. A. Kukushkin, A. Osipov, A. Redkov
Summary: The mechanical properties of composite coatings of silicon carbide on graphite, formed by annealing graphite in contact with a silicon melt in an atmosphere of carbon monoxide, were studied for the first time. The coatings were found to consist of a continuous film of single-crystal silicon carbide, dendrites, and crystalline druses, extending into the sample through a system of pores. The coating significantly improved the mechanical characteristics of the graphite surface, including microhardness.
TECHNICAL PHYSICS LETTERS
(2022)
Article
Physics, Applied
S. A. Kukushkin, A. Osipov
Summary: A theoretical group analysis was conducted on the solid solutions of indium and gallium nitrides, revealing the main symmetry groups and stable phases for different compositions of InxGa1-x. The thermodynamic potentials of these phases were calculated using density functional theory, showing stability trends based on the content of InN and GaN. Overall, the stability of epitaxial films of InxGa1-xN was found to increase with higher InN content and lower GaN content.
TECHNICAL PHYSICS LETTERS
(2022)
Article
Physics, Condensed Matter
P. Seredin, Ali Obaid Radam, D. L. Goloshchapov, A. S. Len'shin, N. S. Buylov, K. A. Barkov, D. N. Nesterov, A. M. Mizerov, S. N. Timoshnev, E. Nikitina, I. N. Arsentyev, Sh Sharafidinov, S. A. Kukushkin, I. A. Kasatkin
Summary: We conducted a structural-spectroscopic study on AlGaN/GaN epitaxial layers grown on a hybrid substrate, and found that the thin films formed on this substrate have minimal residual stresses and intense photoluminescence.
Article
Physics, Applied
L. K. Markov, S. A. Kukushkin, I. P. Smirnova, A. S. Pavlyuchenko, A. S. Grashchenko, A. Osipov, G. Svyatets, A. E. Nikolaev, A. Sakharov, V. V. Lundin, A. F. Tsatsulnikov
Summary: This article describes a technique and technology for manufacturing LED chips and packaged LEDs using AlInGaN/GaN heterostructures grown on SiC/Si substrates. The presence of pores in the SiC/Si substrate significantly increases the quantum efficiency of LEDs.
TECHNICAL PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Alexey Redkov, Sergey Kukushkin
Summary: This study examines the growth of an arbitrary multicomponent non-Kossel crystal through the Burton-Cabrera-Frank mechanism, taking into account the influence of advacancies and their recombination with adatoms on the surface. Analytical expressions were derived for the rate of advancement of equidistant steps and crystal growth rate, considering the properties of all species involved in the growth process. It was found that the effect is intensified at higher temperatures and in the presence of dopants that increase vacancy concentration, with mechanical stress also affecting the growth rate and kinetics.
FARADAY DISCUSSIONS
(2022)
