Anisotropy of the solid-state epitaxy of silicon carbide in silicon

Published 2013 View Full Article

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Title
Anisotropy of the solid-state epitaxy of silicon carbide in silicon
Authors
Keywords
Elastic Stress, Optical Constant, Misfit Dislocation, Silicon Vacancy, Dilatation Center
Journal
SEMICONDUCTORS
Volume 47, Issue 12, Pages 1551-1555
Publisher
Pleiades Publishing Ltd
Online
2013-12-10
DOI
10.1134/s1063782613120129
References
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