Importance of relativistic effects in electronic structure and thermopower calculations forMg2Si,Mg2Ge, andMg2Sn

STUDY OF ELECTRON, PHONON AND CRYSTAL STABILITY VERSUS THERMOELECTRIC PROPERTIES IN Mg2X(X = Si, Sn) COMPOUNDS AND THEIR ALLOYS

(2013) J. BOURGEOIS et al.   Functional Materials Letters

High figure of merit and thermoelectric properties of Bi-doped Mg2Si0.4Sn0.6 solid solutions

(2013) Wei Liu et al.   JOURNAL OF SOLID STATE CHEMISTRY

Calculating electron transport coefficients of disordered alloys using the KKR-CPA method and Boltzmann approach: Application to Mg2Si1−xSnxthermoelectrics

(2013) K. Kutorasiński et al.   PHYSICAL REVIEW B

Valence-band structure of highly efficientp-type thermoelectric PbTe-PbS alloys

(2013) Christopher M. Jaworski et al.   PHYSICAL REVIEW B

High thermoelectric figure of merit of Mg2Si0.55Sn0.4Ge0.05 materials doped with Bi and Sb

(2013) A.U. Khan et al.   SCRIPTA MATERIALIA

Thermoelectric Properties of Hot-Pressed Materials Based on Mg2Si n Sn1−n

(2012) A. Yu. Samunin et al.   JOURNAL OF ELECTRONIC MATERIALS

Doping and temperature dependence of thermoelectric properties in Mg2(Si,Sn)

(2012) J. J. Pulikkotil et al.   PHYSICAL REVIEW B

Multiscale calculations of thermoelectric properties ofn-type Mg2Si1−xSnxsolid solutions

(2012) X. J. Tan et al.   PHYSICAL REVIEW B

Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance ofn-TypeMg2Si1−xSnxSolid Solutions

(2012) Wei Liu et al.   PHYSICAL REVIEW LETTERS

Thermoelectric properties and electronic structure of p-type Mg2Si and Mg2Si0.6Ge0.4 compounds doped with Ga

(2011) H. Ihou-Mouko et al.   JOURNAL OF ALLOYS AND COMPOUNDS

A Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials

(2011) P. Zwolenski et al.   JOURNAL OF ELECTRONIC MATERIALS

Mg-Vacancy-Induced Semiconducting Properties in Mg2Si1–x Sb x from Electronic Structure Calculations

(2009) Janusz Tobola et al.   JOURNAL OF ELECTRONIC MATERIALS

Thermoelectric Properties and Electronic Structure of Bi- and Ag-Doped Mg2Si1−x Ge x Compounds

(2009) K. Mars et al.   JOURNAL OF ELECTRONIC MATERIALS

Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential

(2009) Fabien Tran et al.   PHYSICAL REVIEW LETTERS