Mg-Vacancy-Induced Semiconducting Properties in Mg2Si1–x Sb x from Electronic Structure Calculations

Title
Mg-Vacancy-Induced Semiconducting Properties in Mg2Si1–x Sb x from Electronic Structure Calculations
Authors
Keywords
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Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 39, Issue 9, Pages 2064-2069
Publisher
Springer Nature
Online
2009-12-04
DOI
10.1007/s11664-009-1000-3

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