Importance of relativistic effects in electronic structure and thermopower calculations forMg2Si,Mg2Ge, andMg2Sn
出版年份 2014 全文链接
标题
Importance of relativistic effects in electronic structure and thermopower calculations forMg2Si,Mg2Ge, andMg2Sn
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 89, Issue 11, Pages -
出版商
American Physical Society (APS)
发表日期
2014-03-26
DOI
10.1103/physrevb.89.115205
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- STUDY OF ELECTRON, PHONON AND CRYSTAL STABILITY VERSUS THERMOELECTRIC PROPERTIES IN Mg2X(X = Si, Sn) COMPOUNDS AND THEIR ALLOYS
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- Thermoelectric properties and electronic structure of p-type Mg2Si and Mg2Si0.6Ge0.4 compounds doped with Ga
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- A Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials
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- Mg-Vacancy-Induced Semiconducting Properties in Mg2Si1–x Sb x from Electronic Structure Calculations
- (2009) Janusz Tobola et al. JOURNAL OF ELECTRONIC MATERIALS
- Thermoelectric Properties and Electronic Structure of Bi- and Ag-Doped Mg2Si1−x Ge x Compounds
- (2009) K. Mars et al. JOURNAL OF ELECTRONIC MATERIALS
- Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential
- (2009) Fabien Tran et al. PHYSICAL REVIEW LETTERS
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