Origin of the nonradiative decay of bound excitons in GaN nanowires

Photoluminescence Dynamics of GaN/Si Nanowires

(2016) K.P. Korona et al.   ACTA PHYSICA POLONICA A

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

(2014) Gilles Nogues et al.   APPLIED PHYSICS LETTERS

Statistical Analysis of the Shape of One-Dimensional Nanostructures: Determining the Coalescence Degree of Spontaneously Formed GaN Nanowires

(2014) Oliver Brandt et al.   CRYSTAL GROWTH & DESIGN

Luminescence associated with stacking faults in GaN

(2014) Jonas Lähnemann et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Far-Field Emission Patterns of Nanowire Light-Emitting Diodes

(2014) Junichi Motohisa et al.   NANO LETTERS

Misorientation defects in coalesced self-catalyzed GaN nanowires

(2013) K.A. Grossklaus et al.   JOURNAL OF CRYSTAL GROWTH

On-Chip Optical Interconnects Made with Gallium Nitride Nanowires

(2013) Matt D. Brubaker et al.   NANO LETTERS

Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy

(2013) Sergio Fernández-Garrido et al.   NANO LETTERS

Enhanced and directional emission of semiconductor nanowires tailored through leaky/guided modes

(2013) R. Paniagua-Domínguez et al.   Nanoscale

Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires

(2013) Christian Hauswald et al.   PHYSICAL REVIEW B

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

(2012) Sergio Fernández-Garrido et al.   NANO LETTERS

Time-resolved photoluminescence spectroscopy of individual GaN nanowires

(2012) A. Gorgis et al.   PHYSICAL REVIEW B

Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology

(2011) P. Lefebvre et al.   APPLIED PHYSICS LETTERS

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

(2011) L. Geelhaar et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Injection-level-dependent internal quantum efficiency and lasing in low-defect GaN nanowires

(2011) John B. Schlager et al.   JOURNAL OF APPLIED PHYSICS

GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy

(2011) Pinar Dogan et al.   JOURNAL OF CRYSTAL GROWTH

Room-Temperature Photodetection Dynamics of Single GaN Nanowires

(2011) F. González-Posada et al.   NANO LETTERS

Macro- and micro-strain in GaN nanowires on Si(111)

(2011) B Jenichen et al.   NANOTECHNOLOGY

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer

(2011) T Schumann et al.   NANOTECHNOLOGY

Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

(2011) Ayan Das et al.   PHYSICAL REVIEW LETTERS

Inhibition, Enhancement, and Control of Spontaneous Emission in Photonic Nanowires

(2011) Joël Bleuse et al.   PHYSICAL REVIEW LETTERS

Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods

(2010) Y. S. Park et al.   Journal of Nanoelectronics and Optoelectronics

Micro- and Time-resolved Photoluminescence in GaN Nanorods with Different Diameters

(2010) Hyunsik Im et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit

(2010) Carsten Pfüller et al.   Nano Research

Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

(2010) Oliver Brandt et al.   PHYSICAL REVIEW B

Transient photoluminescence of shallow donor bound excitons in GaN

(2010) B. Monemar et al.   PHYSICAL REVIEW B

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

(2009) P. Corfdir et al.   APPLIED PHYSICS LETTERS

Effects of nanowire coalescence on their structural and optical properties on a local scale

(2009) V. Consonni et al.   APPLIED PHYSICS LETTERS

Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

(2009) P. Corfdir et al.   JOURNAL OF APPLIED PHYSICS

Evidence for Two Mg Related Acceptors in GaN

(2009) B. Monemar et al.   PHYSICAL REVIEW LETTERS

Low temperature diffusion length of excitons in gallium nitride measured by cathodoluminescence technique

(2008) Naoyuki Ino et al.   APPLIED PHYSICS LETTERS

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

(2008) John B. Schlager et al.   JOURNAL OF APPLIED PHYSICS

Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy

(2008) Hiroto Sekiguchi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Recombination of free and bound excitons in GaN

(2008) B. Monemar et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS