Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit

Published 2010 View Full Article

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Title
Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit
Authors
Keywords
-
Journal
Nano Research
Volume 3, Issue 12, Pages 881-888
Publisher
Springer Nature
Online
2010-11-29
DOI
10.1007/s12274-010-0061-1

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