Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array

(2013) Horng-Shyang Chen et al.   OPTICS LETTERS

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

(2012) M. I. den Hertog et al.   NANO LETTERS

InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon

(2011) Wei Guo et al.   APPLIED PHYSICS LETTERS

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

(2011) Rafael Mata et al.   JOURNAL OF CRYSTAL GROWTH

Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

(2011) G Tourbot et al.   NANOTECHNOLOGY

Submicrometre resolved optical characterization of green nanowire-based light emitting diodes

(2011) A-L Bavencove et al.   NANOTECHNOLOGY

GaN nanorods grown on Si (111) substrates and exciton localization

(2011) Young S Park et al.   Nanoscale Research Letters

Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells

(2010) Vytautas Liuolia et al.   JOURNAL OF APPLIED PHYSICS

Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

(2010) Oliver Brandt et al.   PHYSICAL REVIEW B

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

(2009) P. Corfdir et al.   JOURNAL OF APPLIED PHYSICS

Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion

(2008) O. Landré et al.   APPLIED PHYSICS LETTERS

Low temperature diffusion length of excitons in gallium nitride measured by cathodoluminescence technique

(2008) Naoyuki Ino et al.   APPLIED PHYSICS LETTERS

Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties

(2008) L. Lahourcade et al.   JOURNAL OF APPLIED PHYSICS

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

(2008) John B. Schlager et al.   JOURNAL OF APPLIED PHYSICS