Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 7, Pages 1632-1639Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2008.12.040
Keywords
Molecular beam epitaxy; Nitrides; Laser diodes
Funding
- Polish Ministry of Science and Higher Education [IT 13426]
- DARPA VIGIL [09-1564 15530-FA71]
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We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600-700 degrees C. In this Work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE. (C) 2009 Elsevier B.V. All rights reserved.
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