Formation mechanism of graphene layers on SiC (0001¯) in a high-pressure argon atmosphere
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Title
Formation mechanism of graphene layers on SiC (0001¯) in a high-pressure argon atmosphere
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 84, Issue 3, Pages -
Publisher
American Physical Society (APS)
Online
2011-07-26
DOI
10.1103/physrevb.84.035424
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Note: Only part of the references are listed.- Morphology characterization of argon-mediated epitaxial graphene on C-face SiC
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- Half integer quantum Hall effect in high mobility single layer epitaxial graphene
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- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
- (2009) Konstantin V. Emtsev et al. NATURE MATERIALS
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- (2009) W. Norimatsu et al. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
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- Rotational disorder in few-layer graphene films on6H−SiC(000−1): A scanning tunneling microscopy study
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- Why Multilayer Graphene on4H−SiC(0001¯)Behaves Like a Single Sheet of Graphene
- (2008) J. Hass et al. PHYSICAL REVIEW LETTERS
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- (2008) S. V. Morozov et al. PHYSICAL REVIEW LETTERS
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