Role of carbon surface diffusion on the growth of epitaxial graphene on SiC
Published 2010 View Full Article
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Title
Role of carbon surface diffusion on the growth of epitaxial graphene on SiC
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 81, Issue 12, Pages -
Publisher
American Physical Society (APS)
Online
2010-03-17
DOI
10.1103/physrevb.81.121411
References
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Related references
Note: Only part of the references are listed.- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
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- Running Droplets of Gallium from Evaporation of Gallium Arsenide
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- (2009) A. K. Geim SCIENCE
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- Evidence for graphene growth by C cluster attachment
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- Homogeneous large-area graphene layer growth on6H-SiC(0001)
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- Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
- (2008) K. V. Emtsev et al. PHYSICAL REVIEW B
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