Formation mechanism of graphene layers on SiC (0001¯) in a high-pressure argon atmosphere

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

(2010) J. L. Tedesco et al.   APPLIED PHYSICS LETTERS

AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H–SiC

(2010) Gyan Prakash et al.   CARBON

Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H–SiC

(2010) J. Borysiuk et al.   JOURNAL OF APPLIED PHYSICS

Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces

(2010) Luxmi et al.   PHYSICAL REVIEW B

Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces

(2010) Satoru Tanaka et al.   PHYSICAL REVIEW B

Selective formation of ABC-stacked graphene layers on SiC(0001)

(2010) Wataru Norimatsu et al.   PHYSICAL REVIEW B

Role of carbon surface diffusion on the growth of epitaxial graphene on SiC

(2010) Taisuke Ohta et al.   PHYSICAL REVIEW B

Hall effect mobility of epitaxial graphene grown on silicon carbide

(2009) J. L. Tedesco et al.   APPLIED PHYSICS LETTERS

Half integer quantum Hall effect in high mobility single layer epitaxial graphene

(2009) Xiaosong Wu et al.   APPLIED PHYSICS LETTERS

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

(2009) Konstantin V. Emtsev et al.   NATURE MATERIALS

Formation process of graphene on SiC (0001)

(2009) W. Norimatsu et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Graphene formation mechanisms on4H-SiC(0001)

(2009) Michael L. Bolen et al.   PHYSICAL REVIEW B

Transitional structures of the interface between graphene and 6H–SiC (0001)

(2008) Wataru Norimatsu et al.   CHEMICAL PHYSICS LETTERS

Epitaxial Graphene Transistors on SiC Substrates

(2008) Jakub Kedzierski et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Pressure dependence of SiO2 growth kinetics and electrical properties on SiC

(2008) E. A. Ray et al.   JOURNAL OF APPLIED PHYSICS

Rotational disorder in few-layer graphene films on6H−SiC(000−1): A scanning tunneling microscopy study

(2008) François Varchon et al.   PHYSICAL REVIEW B

Why Multilayer Graphene on4H−SiC(0001¯)Behaves Like a Single Sheet of Graphene

(2008) J. Hass et al.   PHYSICAL REVIEW LETTERS

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

(2008) S. V. Morozov et al.   PHYSICAL REVIEW LETTERS