Nature of electrical resistivity and structural stability in N-doped GeTe models for reliable phase-change materials

Nature of defects and gap states in GeTe model phase change materials

(2012) B. Huang et al.   PHYSICAL REVIEW B

Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5

(2011) Eunae Cho et al.   JOURNAL OF APPLIED PHYSICS

Defect models and electrical storage mechanism in GeSbTe phase change materials

(2011) B. Huang et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

First-principles calculations on the energetics of nitrogen-doped hexagonal Ge2Sb2Te5

(2010) Sae-Jin Kim et al.   JOURNAL OF APPLIED PHYSICS

Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2Te5

(2010) Lina Wei-Wei Fang et al.   JOURNAL OF APPLIED PHYSICS

Bonding origin of optical contrast in phase-change memory materials

(2010) B. Huang et al.   PHYSICAL REVIEW B

Nanoscale Phase Separation and Building Blocks of Ge2Sb2Te5N and Ge2Sb2Te5N2Thin Films

(2009) Konstantin B. Borisenko et al.   CHEMISTRY OF MATERIALS

Influence of Silicon Doping on the Properties of Sputtered Ge2Sb2Te5Thin Film

(2009) Seong-Min Jeong et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Crystallization dynamics of nitrogen-doped Ge2Sb2Te5

(2009) Robert M. Shelby et al.   JOURNAL OF APPLIED PHYSICS

Investigation of phase transition of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5 films using x-ray absorption spectroscopy

(2008) Youngkuk Kim et al.   APPLIED PHYSICS LETTERS

Resonant bonding in crystalline phase-change materials

(2008) Kostiantyn Shportko et al.   NATURE MATERIALS

Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs

(2008) Stephan Lany et al.   PHYSICAL REVIEW B