Dependence of the properties of phase change random access memory on nitrogen doping concentration in Ge2Sb2Te5

Investigation of phase transition of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5 films using x-ray absorption spectroscopy

(2008) Youngkuk Kim et al.   APPLIED PHYSICS LETTERS

Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers

(2008) Ting Zhang et al.   APPLIED PHYSICS LETTERS

Characteristics of amorphous Ag0.1(Ge2Sb2Te5)0.9 thin film and its ultrafast crystallization

(2008) Ki-Ho Song et al.   JOURNAL OF APPLIED PHYSICS

Bilayer Heater Electrode for Improving Reliability of Phase-Change Memory Devices

(2008) Seung-Yun Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode

(2008) Feng Rao et al.   NANOTECHNOLOGY

Phase transition characteristics and device performance of Si-doped Ge2Sb2Te5

(2008) Sung-Jin Park et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The effect of antimony-doping on Ge2Sb2Te5, a phase change material

(2008) Kyu-Jeong Choi et al.   THIN SOLID FILMS