Growth temperature dependence of the electrical and structural properties of epitaxial graphene on SiC(0001)
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Title
Growth temperature dependence of the electrical and structural properties of epitaxial graphene on SiC(0001)
Authors
Keywords
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Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 248, Issue 8, Pages 1908-1914
Publisher
Wiley
Online
2011-03-08
DOI
10.1002/pssb.201046368
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- Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
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- Ultrafast graphene photodetector
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- Growth mechanism for epitaxial graphene on vicinal6H-SiC(0001)surfaces: A scanning tunneling microscopy study
- (2009) M. Hupalo et al. PHYSICAL REVIEW B
- Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
- (2009) C. Riedl et al. PHYSICAL REVIEW LETTERS
- Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)
- (2008) Luxmi et al. JOURNAL OF ELECTRONIC MATERIALS
- Pit formation during graphene synthesis on SiC(0001):In situelectron microscopy
- (2008) J. B. Hannon et al. PHYSICAL REVIEW B
- Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
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- Ultrahigh electron mobility in suspended graphene
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