Recombination via point defects and their complexes in solar silicon

Impact of Metal Contamination in Silicon Solar Cells

(2011) Gianluca Coletti et al.   ADVANCED FUNCTIONAL MATERIALS

The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?

(2011) L. I. Murin et al.   APPLIED PHYSICS LETTERS

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

(2011) F. E. Rougieux et al.   JOURNAL OF APPLIED PHYSICS

Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched28Si

(2011) M. Steger et al.   JOURNAL OF APPLIED PHYSICS

Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study

(2011) A. Carvalho et al.   PHYSICAL REVIEW B

Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells

(2010) V. V. Voronkov et al.   JOURNAL OF APPLIED PHYSICS

Effect of Au contamination on the electrical characteristics of a “model” small-angle grain boundary in n-type direct silicon bonded wafer

(2010) X. Yu et al.   JOURNAL OF APPLIED PHYSICS

The impact of dopant compensation on the boron-oxygen defect in p- and n-type crystalline silicon

(2010) D. Macdonald et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ti, Fe, and Ni in Si and their interactions with the vacancy and theAcenter: A theoretical study

(2010) D. J. Backlund et al.   PHYSICAL REVIEW B

Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

(2009) D. Macdonald et al.   JOURNAL OF APPLIED PHYSICS

Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells

(2008) G. Coletti et al.   JOURNAL OF APPLIED PHYSICS