Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study

Copper-related deep-level centers in irradiatedp-type silicon

(2011) Nikolai Yarykin et al.   PHYSICAL REVIEW B

Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper

(2010) Minoru Nakamura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Aggregation of interstitial copper atoms in silicon

(2010) J.E. Lowther   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Ti, Fe, and Ni in Si and their interactions with the vacancy and theAcenter: A theoretical study

(2010) D. J. Backlund et al.   PHYSICAL REVIEW B

Role of copper in light induced minority-carrier lifetime degradation of silicon

(2009) H. Savin et al.   APPLIED PHYSICS LETTERS

Compositional Transformation between Cu Centers by Annealing in Cu-Diffused Silicon Crystals Studied with Deep-Level Transient Spectroscopy and Photoluminescence

(2009) Minoru Nakamura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A new structure of Cu complex in Si and its photoluminescence

(2009) K Shirai et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Diffusion-Temperature-Dependent Formation of Cu Centers in Cu-Saturated Silicon Crystals Studied by Photoluminescence and Deep-Level Transient Spectroscopy

(2008) Minoru Nakamura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effect of silicon interstitials on Cu precipitation in n-type Czochralski silicon

(2008) Weiyan Wang et al.   JOURNAL OF APPLIED PHYSICS

Reduction of the Linewidths of Deep Luminescence Centers inSi28Reveals Fingerprints of the Isotope Constituents

(2008) M. Steger et al.   PHYSICAL REVIEW LETTERS