Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 44, Issue 39, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/44/39/395102
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Funding
- UK EPSRC
- UK Seren Photonic Limited
- Engineering and Physical Sciences Research Council [EP/H004602/1] Funding Source: researchfish
- EPSRC [EP/H004602/1] Funding Source: UKRI
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Optical investigation has been carried out on InGaN/GaN nanorod structures with different indium compositions, fabricated from InGaN/GaN multiple quantum well (MQW) epitaxial wafers using a self-organized nickel nano-mask and subsequent dry etching techniques. In comparison with the as-grown InGaN/GaN MQWs, the internal quantum efficiencies of the nanorods are significantly improved, in particular, for the green InGaN/GaN nanorods with a high indium composition, the internal quantum efficiency is enhanced by a factor of 8, much larger than the enhancement factor of 3.4 for the blue InGaN/GaN nanorods. X-ray reciprocal space mapping (RSM) measurements have been performed in order to quantitatively evaluate the stain relaxation in the nanorods, demonstrating that the majority of strain in InGaN/GaN MQWs can be relaxed as a result of fabrication into nanorods. The excitation-power-dependent photoluminescence measurements have also clearly shown that a significant reduction in the strain-induced quantum confined stark effect has occurred to the nanorod structures.
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