GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy

(2012) Hai Lin et al.   APPLIED PHYSICS LETTERS

Mid- to long-wavelength infrared plasmonic-photonics using heavily doped n-Ge/Ge and n-GeSn/GeSn heterostructures

(2012) Richard Soref et al.   OPTICS EXPRESS

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon

(2012) Laurent Vivien et al.   OPTICS EXPRESS

Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip

(2012) Alban Gassenq et al.   OPTICS EXPRESS

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

(2011) B. Vincent et al.   APPLIED PHYSICS LETTERS

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

(2011) R. Roucka et al.   APPLIED PHYSICS LETTERS

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

(2011) Radek Roucka et al.   JOURNAL OF APPLIED PHYSICS

GeSn p-i-n photodetector for all telecommunication bands detection

(2011) Shaojian Su et al.   OPTICS EXPRESS

Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si

(2011) J. Werner et al.   THIN SOLID FILMS

Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

(2011) F. Gencarelli et al.   THIN SOLID FILMS

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

(2010) J. Mathews et al.   APPLIED PHYSICS LETTERS

Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers

(2010) Guo-En Chang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors

(2010) Cheol-Joo Kim et al.   NANO LETTERS

Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode

(2010) G. Sun et al.   OPTICS EXPRESS

Ge1−ySny photoconductor structures at 1.55μm: From advanced materials to prototype devices

(2008) R. Roucka et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B