Zero-bias 40Gbit/s germanium waveguide photodetector on silicon

Monolithically Integrated 40-Wavelength Demultiplexer and Photodetector Array on Silicon

(2011) Long Chen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique

(2011) M. Kolahdouz et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp

(2011) Hui-Wen Chen et al.   OPTICS EXPRESS

36 GHz submicron silicon waveguide germanium photodetector

(2011) Shirong Liao et al.   OPTICS EXPRESS

High contrast 40Gbit/s optical modulation in silicon

(2011) D. J. Thomson et al.   OPTICS EXPRESS

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers

(2011) B. Ben Bakir et al.   OPTICS EXPRESS

Ge-Photodetectors for Si-Based Optoelectronic Integration

(2011) Jian Wang et al.   SENSORS

Low threading dislocation density Ge deposited on Si (100) using RPCVD

(2011) Yuji Yamamoto et al.   SOLID-STATE ELECTRONICS

Monolithic Integration of Silicon-, Germanium-, and Silica-Based Optical Devices for Telecommunications Applications

(2010) Tai Tsuchizawa et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators

(2010) Sungbong Park et al.   OPTICS EXPRESS

Ge-on-Si laser operating at room temperature

(2010) Jifeng Liu et al.   OPTICS LETTERS

A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

(2009) G. Wang et al.   APPLIED PHYSICS LETTERS

Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

(2009) J.M. Hartmann et al.   JOURNAL OF CRYSTAL GROWTH

42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide

(2009) Laurent Vivien et al.   OPTICS EXPRESS

Recent Progress in High-Speed Silicon-Based Optical Modulators

(2009) Delphine Marris-Morini et al.   PROCEEDINGS OF THE IEEE

Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si

(2009) J M Hartmann et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY