Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors

标题
Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors
作者
关键词
-
出版物
NANOTECHNOLOGY
Volume 25, Issue 15, Pages 155201
出版商
IOP Publishing
发表日期
2014-03-19
DOI
10.1088/0957-4484/25/15/155201

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