Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors
出版年份 2014 全文链接
标题
Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors
作者
关键词
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出版物
NANOTECHNOLOGY
Volume 25, Issue 15, Pages 155201
出版商
IOP Publishing
发表日期
2014-03-19
DOI
10.1088/0957-4484/25/15/155201
参考文献
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