期刊
NANOTECHNOLOGY
卷 22, 期 44, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/22/44/445202
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资金
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- Fonds de Recherche sur la Nature et les Technologies (FQRNT)
- Canada Foundation for Innovation
- McGill University
We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step. Such devices can exhibit relatively high internal quantum efficiency (> 20%) and no apparent efficiency droop for current densities up to similar to 200 A cm(-2).
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