Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory

Study on the physical properties and structure of titanium antimony thin films for phase change memory application

(2017) Weihua Wu et al.   JOURNAL OF MATERIALS SCIENCE

Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application

(2017) Weihua Wu et al.   NANOTECHNOLOGY

Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

(2017) Feng Rao et al.   SCIENCE

Suppression for an intermediate phase in ZnSb films by NiO-doping

(2017) Chao Li et al.   Scientific Reports

Multilevel data storage in multilayer phase change material

(2016) Yegang Lu et al.   APPLIED PHYSICS LETTERS

Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits

(2016) Yegang Lu et al.   NANO LETTERS

Thickness dependent nano-crystallization in Ti 0.43 Sb 2 Te 3 films and its effect on devices

(2015) Le Li et al.   THIN SOLID FILMS

Direct observation of titanium-centered octahedra in titanium–antimony–tellurium phase-change material

(2015) Feng Rao et al.   Nature Communications

Phase change materials and phase change memory

(2014) Simone Raoux et al.   MRS BULLETIN

Phase transition characteristics of Al-Sb phase change materials for phase change memory application

(2013) Xilin Zhou et al.   APPLIED PHYSICS LETTERS

Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory

(2013) Yegang Lu et al.   APPLIED PHYSICS LETTERS

Influence of dopants on atomic migration and void formation in molten Ge2Sb2Te5 under high-amplitude electrical pulse

(2012) T.-Y. Yang et al.   ACTA MATERIALIA

Multi-Step Resistance Memory Behavior in Ge2Sb2Te5/GeTe Stacked Chalcogenide Films

(2012) Yifeng Hu et al.   INTEGRATED FERROELECTRICS

Nanofibers: Effective Generation by Electrospinning and Their Applications

(2012) P. Ramesh Kumar et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Fast and scalable memory characteristics of Ge-doped SbTe phase change materials

(2012) Byung-ki Cheong et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials

(2011) Feng Rao et al.   ACTA MATERIALIA

Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

(2011) Xilin Zhou et al.   APPLIED PHYSICS LETTERS

Crystallization behaviors of an ultra-thin Ga–Sb film

(2011) Chih-Chung Chang et al.   CRYSTENGCOMM

SiO2doped Ge2Sb2Te5thin films with high thermal efficiency for applications in phase change random access memory

(2011) Seung Wook Ryu et al.   NANOTECHNOLOGY

Si–Sb–Te materials for phase change memory applications

(2011) Feng Rao et al.   NANOTECHNOLOGY

Interfacial phase-change memory

(2011) R. E. Simpson et al.   Nature Nanotechnology

Phase Change Memory Based on (Sb2Te3)0.85–(HfO2)0.15Composite Film

(2010) Yegang Lu et al.   Applied Physics Express

Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation

(2010) Byung Joon Choi et al.   APPLIED PHYSICS LETTERS

Voltage-Driven Partial-RESET Multilevel Programming in Phase-Change Memories

(2010) Stefania Braga et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Phase Change Materials

(2009) Simone Raoux   Annual Review of Materials Research

Phase transitions in Ge–Te phase change materials studied by time-resolved x-ray diffraction

(2009) Simone Raoux et al.   APPLIED PHYSICS LETTERS

Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

(2009)   APPLIED PHYSICS LETTERS

Threshold field of phase change memory materials measured using phase change bridge devices

(2009) Daniel Krebs et al.   APPLIED PHYSICS LETTERS

Multistate storage through successive phase change and resistive change

(2009) Liangcai Wu et al.   APPLIED PHYSICS LETTERS

Oxygen-doped Si15Sb85thin film for good data retention and high speed phase-change memory application

(2009) Yin Zhang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing

(2008) Suyoun Lee et al.   APPLIED PHYSICS LETTERS

Threshold switching and phase transition numerical models for phase change memory simulations

(2008) A. Redaelli et al.   JOURNAL OF APPLIED PHYSICS

Amorphous–crystalline phase transitions in chalcogenide materials for memory applications

(2008) T. Gille et al.   PHASE TRANSITIONS

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B